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AO4710 N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
TM
General Description
SRFET The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4710 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8m (VGS = 10V) RDS(ON) < 14.2m (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G S
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current
C C B
Maximum 30 12 12.7 10 60 22 73 3.1 2.0 -55 to 150
Units V V A A A mJ W C
VGS TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG
Repetitive avalanche energy L=0.3mH TA=25C Power Dissipation TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead
C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 32 60 17
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4710
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=12.7A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=12.7A TJ=125C 1.5 60 9.8 15.2 11.7 78 0.38 0.5 5 1980 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 317 111 1.3 33 VGS=10V, VDS=15V, ID=12.7A 15.0 5.3 6.0 5.5 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=12.7A, dI/dt=300A/s 5.5 27.0 4.3 11.2 7 13 2.0 43 20 2376 11.8 19.0 14.2 1.9 Min 30 0.02 6 0.1 20 0.1 2.3 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=12.7A, dI/dt=300A/s
A: The value of R JA is measured withthe device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 4.5V 60 ID (A) ID(A) 15 10 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=11A ID=12.7A VGS=10V 6V 30 25 20 VDS=5V
80
40 VGS=3.5V 20
125
25C
0
DYNAMIC PARAMETERS Figure 1: On-Region Characteristics
15
VGS=4.5V RDS(ON) (m ) 12
9
VGS=10V
6
30 ID=12.7A 125C RDS(ON) (m ) IS (A) 20
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 125C
25
15
10 25C 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 Capacitance (pF) VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=12.7A 3000 2500 Ciss 2000 1500 1000 Crss 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
DYNAMIC PARAMETERS
100.0 10s 10.0 ID (Amps) RDS(ON) limited 1.0 10ms DC 0.1 TJ(Max)=150C TA=25C 1ms 100 Power (W)
100 90 80 70 60 50 40 30 20 10 TJ(Max)=150C TA=25C
0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1 0.9 1.0E-02 VDS=24V 1.0E-03 IR (A) VSD(V) VDS=12V 1.0E-04 0.8 0.7 0.6 0.5 0.4 0.3 1.0E-05 0.2 0.1 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode PARAMETERS Reverse Leakage Current vs. Junction Temperature 8 di/dt=800A/us 20 15 10 5 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 125C 20 15 10 5 0 0 125 25C Qrr Irm 200 400 600 800 Is=20A 25C Qrr (nC) 10 9 8 7 Irm (A) 5 4 3 2 1 0 1000 3 0 0 200 400 600 800 125C S 0.5 0 1000 trr (ns) 6 15 12 9 6 25C 18 125C 25C Is=20A 2.5 2 trr 1.5 1 S Qrr 125C Irm 25C 2 25C Irm (A) trr (ns) 4 125C 6 12 9 trr 6 25C 3 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current S 125C 0 0 0.5 25C 1 di/dt=800A/us 125C 2 1.5 15 0 50 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 2.5 50 IS=1A 10A 5A 20A
DYNAMIC
25
Qrr (nC)
3
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S

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